Plenary speakers

• Shizuo Fujita, Kentaro Kaneko, and Katsuhisa Tanaka (Kyoto University, Japan)
  • “Progress of α-Ga₂O₃ for actual device applications”
• Zbigniew Galazka (Leibniz Institut für Kristallzüchtung, Germany)
  • “Overview of the growth and physical properties of Czochralski-grown bulk β-Ga₂O₃ single crystals and related compounds.”
• Siddharth Rajan (The Ohio State University, USA)
  • “Materials and device engineering for high-performance gallium oxide electronics”

 

Invited speakers

Epitaxial thin film growth

• Giang T. Dang (Kochi University of Technology, Japan)
  • “Preparation of conductive Si-doped α-(Al_xGa_1-x)₂O₃ thin films using chloro(3-cyanopropyl)dimethylsilane via mist CVD”
• Debdeep Jena (Cornell University, USA)
  • “MBE grown and properties of ultrawide bandgap oxide layers spanning 5.0 – 9.0 eV energy gaps.”
• Sriram Krishnamoorthy (University of California, Santa Barbara, USA)
  • “MOCVD-grown gallium (aluminum) oxide thin films, heterostructures and in-situ dielectrics”
• Hiroyuki Nishinaka (Kyoto Institute of Technology, Japan)
  • “Single-domain κ-Ga₂O₃ thin films grown on ε-GaFeO₃ substrates by mist CVD”
• Hongping Zhao (The Ohio State University, USA)
  • “MOCVD growth of Ga₂O₃ and (AlGa)₂O₃: thin films and heterostructures”

Characterization

• Andreas Fiedler (Leibniz Institut für Kristallzüchtung, Germany)
  • “Electronic Raman scattering in β-Ga₂O₃“
• Baishakhi Mazumder (University at Buffalo, USA)
  • “Building connections between atom positions to materials structure-chemistry: A pathway to design and development of ultrawide bandgap semiconductors”
• Becky Peterson (University of Michigan, USA)
  • “The anisotropy of ohmic contacts to gallium oxide”
• Filip Tuomisto (University of Helsinki, Finland)
  • “Split Ga vacancies in β-Ga₂O₃ crystals”

Theory

• Hartwin Peelaers (University of Kansas, USA)
  • “First-principles modeling of the properties of Ga₂O₃“
• Joel Varley (Lawrence Livermore National Laboratory, USA)
  • “Understanding point defects and impurities in Ga₂O₃ and (Al,Ga)₂O₃ through atomistic simulations”

Device

• Samuel Graham (University of Maryland, USA)
  • “Analysis of methods to improve the thermal management of β-gallium oxide transistors”
• Andrew Green (Air Force Research Laboratory, USA)
  • “Recent developments in gallium oxide device research at AFRL.”
• Daiki Wakimoto (Novel Crystal Technology, Inc., Japan)
  • “5.0 kV normally-off β-Ga₂O₃ FinFET with 42μm-thick drift layer and HfO₂ gate insulator”
• Yuhao Zhang (Virginia Tech, USA)
  • “Addressing the thermal challenges of Ga₂O₃ power devices by packaging”

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