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Sponsored by The IWGO2022 Steering Committee
Co-sponsored by JACG
Supported by JSAP
Supported by WideG
Supported by International Exchange Program of National Institute of Information and Communications Technology (NICT)
Supported by Ichimura Foundation for New Technology
Supported by Nagano Convention & Visitors Bureau
(ながの観光コンベンションビューロー)
Supported by Nagano Prefecture(長野県)
Nagano Industrial and Commercial Encouragement Organization
Supported by Nagano Industrial and Commercial Encouragement Organization(長野県産業振興機構(NICE))

Plenary and Invited Speakers

Plenary speakers

  • Shizuo Fujita, Kentaro Kaneko, and Katsuhisa Tanaka (Kyoto University, Japan)
    • “Progress of α-Ga2O3 for actual device applications”
  • Zbigniew Galazka (Leibniz Institut für Kristallzüchtung, Germany)
    • “Overview of the growth and physical properties of Czochralski-grown bulk β-Ga2O3 single crystals and related compounds.”
  • Siddharth Rajan (The Ohio State University, USA)
    • “Materials and device engineering for high-performance gallium oxide electronics”

 

Invited speakers

Epitaxial thin film growth

  • Giang T. Dang (Kochi University of Technology, Japan)
    • “Preparation of conductive Si-doped α-(AlxGa1-x)2O3 thin films using chloro(3-cyanopropyl)dimethylsilane via mist CVD”
  • Debdeep Jena (Cornell University, USA)
    • “MBE grown and properties of ultrawide bandgap oxide layers spanning 5.0 – 9.0 eV energy gaps.”
  • Sriram Krishnamoorthy (University of California, Santa Barbara, USA)
    • “MOCVD-grown gallium (aluminum) oxide thin films, heterostructures and in-situ dielectrics”
  • Hiroyuki Nishinaka (Kyoto Institute of Technology, Japan)
    • “Single-domain κ-Ga2O3 thin films grown on ε-GaFeO3 substrates by mist CVD”
  • Hongping Zhao (The Ohio State University, USA)
    • “MOCVD growth of Ga2O3 and (AlGa)2O3: thin films and heterostructures”

Characterization

  • Andreas Fiedler (Leibniz Institut für Kristallzüchtung, Germany)
    • “Electronic Raman scattering in β-Ga2O3
  • Baishakhi Mazumder (University at Buffalo, USA)
    • “Building connections between atom positions to materials structure-chemistry: A pathway to design and development of ultrawide bandgap semiconductors”
  • Becky Peterson (University of Michigan, USA)
    • “The anisotropy of ohmic contacts to gallium oxide”
  • Filip Tuomisto (University of Helsinki, Finland)
    • “Split Ga vacancies in β-Ga2O3 crystals”

Theory

  • Hartwin Peelaers (University of Kansas, USA)
    • “First-principles modeling of the properties of Ga2O3
  • Joel Varley (Lawrence Livermore National Laboratory, USA)
    • “Understanding point defects and impurities in Ga2O3 and (Al,Ga)2O3 through atomistic simulations”

Device

  • Samuel Graham (University of Maryland, USA)
    • “Analysis of methods to improve the thermal management of β-gallium oxide transistors”
  • Andrew Green (Air Force Research Laboratory, USA)
    • “Recent developments in gallium oxide device research at AFRL.”
  • Daiki Wakimoto (Novel Crystal Technology, Inc., Japan)
    • “5.0 kV normally-off β-Ga2O3 FinFET with 42μm-thick drift layer and HfO2 gate insulator”
  • Yuhao Zhang (Virginia Tech, USA)
    • “Addressing the thermal challenges of Ga2O3 power devices by packaging”

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