Plenary speakers

• Shizuo Fujita, Kentaro Kaneko, and Katsuhisa Tanaka (Kyoto University, Japan)
  • “Progress of alpha-Ga₂O₃ for actual device applications”
• Zbigniew Galazka (Leibniz Institut für Kristallzüchtung, Germany)
  • “Overview of the growth and physical properties of Czochralski-grown bulk β-Ga₂O₃ single crystals and related compounds.”
• Siddharth Rajan (The Ohio State University, USA)
  • “Materials and device engineering for high-performance gallium oxide electronics”

Invited speakers

Epitaxial thin film growth

• Giang T. Dang (Kochi University of Technology, Japan)
  • “Preparation of conductive Si-doped alpha-(Al_xGa_1-x)₂O₃ thin films using chloro(3-cyanopropyl)dimethylsilane via mist CVD” (tentative)
• Debdeep Jena (Cornell University, USA)
  • “Transport and device physics of Ga₂O₃ and (AlGa)₂O₃” (tentative)
• Sriram Krishnamoorthy (University of California, Santa Barbara, USA)
  • “MOCVD-grown Gallium (Aluminum) Oxide thin films, heterostructures and in-situ dielectrics” (tentative)
• Hiroyuki Nishinaka (Kyoto Institute of Technology, Japan)
  • “Single-domain κ-Ga₂O₃ thin films grown on ε-GaFeO₃ substrates by mist CVD” (tentative)
• Hongping Zhao (The Ohio State University, USA)
  • “MOCVD growth of Ga₂O₃ and (AlGa)₂O₃: thin films and heterostructures” (tentative)

Characterization

• Andreas Fiedler (Leibniz Institut für Kristallzüchtung, Germany)
  • “Electronic Raman scattering in β-Ga₂O₃” (tentative)
• Baishakhi Mazumder (University at Buffalo, USA)
  • “3D chemical imaging of atomic scale structure-chemistry for design and development of ultrawide bandgap materials” (tentative)
• Becky Peterson (University of Michigan, USA)
  • “Interfacial characteristics of ohmic contacts and dielectrics on Ga₂O₃” (tentative)
• Filip Tuomisto (University of Helsinki, Finland)
  • “Diversity of (split) Ga vacancies and their complexes in β-Ga₂O₃ crystals” (tentative)

Theory

• Hartwin Peelaers (University of Kansas, USA)
  • “Theory: alloys, optical properties, point defects” (tentative)
• Joel Varley (Lawrence Livermore National Laboratory, USA)
  • “Understanding point defects and impurities in Ga₂O₃ and (Al,Ga)₂O₃ through atomistic simulations” (tentative)

Device

• Samuel Graham (University of Maryland, USA)
  • “Addressing thermal challenges in β-Ga₂O₃ electronics” (tentative)
• Andrew Green (Air Force Research Laboratory, USA)
  • “Progress towards the realization of Ga₂O₃ power electronics” (tentative)
• Yuhao Zhang (Virginia Tech, USA)
  • “Addressing the thermal challenges of Ga₂O₃ power rectifiers through packaging” (tentative)

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