Plenary speakers
- Shizuo Fujita, Kentaro Kaneko, and Katsuhisa Tanaka (Kyoto University, Japan)
- “Progress of alpha-Ga2O3 for actual device applications”
- Zbigniew Galazka (Leibniz Institut für Kristallzüchtung, Germany)
- “Overview of the growth and physical properties of Czochralski-grown bulk β-Ga2O3 single crystals and related compounds.”
- Siddharth Rajan (The Ohio State University, USA)
- “Materials and device engineering for high-performance gallium oxide electronics”
Invited speakers
Epitaxial thin film growth
- Giang T. Dang (Kochi University of Technology, Japan)
- “Preparation of conductive Si-doped alpha-(AlxGa1-x)2O3 thin films using chloro(3-cyanopropyl)dimethylsilane via mist CVD” (tentative)
- Debdeep Jena (Cornell University, USA)
- “Transport and device physics of Ga2O3 and (AlGa)2O3” (tentative)
- Sriram Krishnamoorthy (University of California, Santa Barbara, USA)
- “MOCVD-grown Gallium (Aluminum) Oxide thin films, heterostructures and in-situ dielectrics” (tentative)
- Hiroyuki Nishinaka (Kyoto Institute of Technology, Japan)
- “Single-domain κ-Ga2O3 thin films grown on ε-GaFeO3 substrates by mist CVD” (tentative)
- Hongping Zhao (The Ohio State University, USA)
- “MOCVD growth of Ga2O3 and (AlGa)2O3: thin films and heterostructures” (tentative)
Characterization
- Andreas Fiedler (Leibniz Institut für Kristallzüchtung, Germany)
- “Electronic Raman scattering in β-Ga2O3” (tentative)
- Baishakhi Mazumder (University at Buffalo, USA)
- “3D chemical imaging of atomic scale structure-chemistry for design and development of ultrawide bandgap materials” (tentative)
- Becky Peterson (University of Michigan, USA)
- “Interfacial characteristics of ohmic contacts and dielectrics on Ga2O3” (tentative)
- Filip Tuomisto (University of Helsinki, Finland)
- “Diversity of (split) Ga vacancies and their complexes in β-Ga2O3 crystals” (tentative)
Theory
- Hartwin Peelaers (University of Kansas, USA)
- “Theory: alloys, optical properties, point defects” (tentative)
- Joel Varley (Lawrence Livermore National Laboratory, USA)
- “Understanding point defects and impurities in Ga2O3 and (Al,Ga)2O3 through atomistic simulations” (tentative)
Device
- Samuel Graham (University of Maryland, USA)
- “Addressing thermal challenges in β-Ga2O3 electronics” (tentative)
- Andrew Green (Air Force Research Laboratory, USA)
- “Progress towards the realization of Ga2O3 power electronics” (tentative)
- Yuhao Zhang (Virginia Tech, USA)
- “Addressing the thermal challenges of Ga2O3 power rectifiers through packaging” (tentative)
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